BS170 N-Channel Switching MOSFET

The BS170N is a small-signal N-channel enhancement-mode MOSFET manufactured using high-cell DMOS technology for fast, reliable switching performance. As a voltage-controlled device, it switches loads based purely on gate voltage, offering high input impedance and CMOS-logic compatibility for easy interfacing with microcontrollers.

It is well suited to small servo motor control, power MOSFET gate driving and other low to medium current switching tasks. With a continuous drain current rating of 500mA, a peak current capability of 1200mA, and an on-state resistance of just 2.5 ohms, it switches efficiently with minimal power loss, and its design avoids thermal runaway or secondary breakdown issues common in less robust switching devices.

• Device type – N-channel enhancement-mode MOSFET
• Drain-Source voltage – Max 60V
• Gate-Source voltage – Max ±15V
• Continuous drain current – Max 500mA (peak 1200mA)
• On-state resistance – 2.5 ohms
• Input type – CMOS logic compatible, high input impedance
• Operating temperature – -55°C to +150°C
• Reliability – No thermal runaway or secondary breakdown

Its fast switching speed and stable thermal characteristics make it a great fit for small servo control, gate driving and general small-signal switching in DIY electronics. The BS170 N-Channel Switching MOSFET offers dependable performance for hobbyist and professional circuits alike.